Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

IS45R83200D Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS45R83200D
Description  256-MBIT SYNCHRONOUS DRAM
Download  62 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS45R83200D Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

  IS45R83200D Datasheet HTML 1Page - Integrated Silicon Solution, Inc IS45R83200D Datasheet HTML 2Page - Integrated Silicon Solution, Inc IS45R83200D Datasheet HTML 3Page - Integrated Silicon Solution, Inc IS45R83200D Datasheet HTML 4Page - Integrated Silicon Solution, Inc IS45R83200D Datasheet HTML 5Page - Integrated Silicon Solution, Inc IS45R83200D Datasheet HTML 6Page - Integrated Silicon Solution, Inc IS45R83200D Datasheet HTML 7Page - Integrated Silicon Solution, Inc IS45R83200D Datasheet HTML 8Page - Integrated Silicon Solution, Inc IS45R83200D Datasheet HTML 9Page - Integrated Silicon Solution, Inc Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 62 page
background image
IS42R83200D, IS42R16160D
IS45R83200D, IS45R16160D
Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. A
03/02/2010
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
• Clockfrequency:133,100MHz
• Fullysynchronous;allsignalsreferencedtoa
positive clock edge
• Internalbankforhidingrowaccess/precharge
• SinglePowersupply:2.5V+0.2V
• LVTTLinterface
• Programmableburstlength
– (1, 2, 4, 8, full page)
• Programmableburstsequence:
Sequential/Interleave
• AutoRefresh(CBR)
• SelfRefresh
• 8Krefreshcyclesevery16ms(A2grade)or
64 ms (commercial, industrial, A1 grade)
• Randomcolumnaddresseveryclockcycle
• ProgrammableCAS latency (2, 3 clocks)
• Burstread/writeandburstread/singlewrite
operations capability
• Burstterminationbyburststopandprecharge
command
OPTIONS
• Package:
54-pinTSOP-II(x8andx16)
54-ballBGA(x16only)
• OperatingTemperatureRange:
Commercial (0oC to +70oC)
Industrial (-40oCto+85oC)
AutomotiveGradeA1(-40oCto+85oC)
AutomotiveGradeA2(-40oCto+105oC)
OVERVIEW
ISSI's256MbSynchronousDRAMachieveshigh-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The256MbSDRAMisorganizedasfollows.
32Meg x 8, 16Meg x16
256-MBIT SYNCHRONOUS DRAM
MARCH 2010
KEY TIMING PARAMETERS
Parameter
-75
Unit
ClkCycleTime
CAS
Latency=3
7.5
ns
CAS
Latency=2
10
ns
ClkFrequency
CAS
Latency=3
133
Mhz
CAS
Latency=2
100
Mhz
AccessTimefromClock
CAS
Latency=3
5.4
ns
CAS
Latency=2
6
ns
IS42/45R83200D IS42/45R16160D
8Mx8x4Banks 4Mx16x4Banks
54-pinTSOPII
54-pinTSOPII
54-ballBGA
Parameter
32M x 8
16M x 16
Configuration
8M x 8 x 4
banks
4M x 16 x 4
banks
Refresh Count
Com./Ind.
A1
A2
8K/64ms
8K/64ms
8K/16ms
8K/64ms
8K/64ms
8K/16ms
Row Addresses
A0-A12
A0-A12
Column Addresses
A0-A9
A0-A8
Bank Address Pins
BA0, BA1
BA0, BA1
Auto Precharge Pins
A10/AP
A10/AP
ADDRESS TABLE


Similar Part No. - IS45R83200D

ManufacturerPart #DatasheetDescription
logo
Integrated Silicon Solu...
IS45R86400D ISSI-IS45R86400D Datasheet
1Mb / 66P
   Internal bank for hiding row access/precharge
IS45R86400F ISSI-IS45R86400F Datasheet
1Mb / 68P
   8K refresh cycles every 64 ms
More results

Similar Description - IS45R83200D

ManufacturerPart #DatasheetDescription
logo
Qimonda AG
HYB39SC256 QIMONDA-HYB39SC256 Datasheet
1Mb / 24P
   256-MBit Synchronous DRAM
logo
Integrated Silicon Solu...
IS42S16160B-6BL ISSI-IS42S16160B-6BL Datasheet
768Kb / 62P
   256-MBIT SYNCHRONOUS DRAM
logo
Siemens Semiconductor G...
HYB39S256400 SIEMENS-HYB39S256400 Datasheet
425Kb / 56P
   256 MBit Synchronous DRAM
logo
Infineon Technologies A...
HYB39S256400D INFINEON-HYB39S256400D Datasheet
630Kb / 28P
   256-MBit Synchronous DRAM
Rev. 1.02, Feb. 2004
HYB39S256400DT INFINEON-HYB39S256400DT Datasheet
564Kb / 22P
   256 MBit Synchronous DRAM
2002-04-23
logo
Qimonda AG
HYB39S256407FE QIMONDA-HYB39S256407FE Datasheet
1Mb / 27P
   256-MBit Synchronous DRAM
logo
Integrated Silicon Solu...
IS42S16160 ISSI-IS42S16160 Datasheet
949Kb / 60P
   256-MBIT SYNCHRONOUS DRAM
logo
Infineon Technologies A...
HYB39L256160AC INFINEON-HYB39L256160AC Datasheet
632Kb / 48P
   256 MBit Synchronous Low-Power DRAM
2002-12-20
logo
Integrated Silicon Solu...
IS42S83200B ISSI-IS42S83200B Datasheet
630Kb / 62P
   32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S83200D ISSI-IS42S83200D Datasheet
1Mb / 63P
   32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com