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IS42SM32160C Datasheet(PDF) 3 Page - Integrated Silicon Solution, Inc

Part # IS42SM32160C
Description  512Mb Mobile Synchronous DRAM
Download  17 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42SM32160C Datasheet(HTML) 3 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc.
3
Rev.  A
11/09/2010
IS42SM32160C
IS42RM32160C
Symbol
Type
Description
CLK
Input
Clock:CLKisdrivenbythesystemclock.AllSDRAMinputsignalsaresampledonthepositiveedgeof
CLK.CLKalsoincrementstheinternalburstcounterandcontrolstheoutputregisters.
CKE
Input
ClockEnable:CKEactivates(HIGH)anddeactivates(LOW)theCLKsignal.IfCKEgoeslowsynchronously
withclock(set-upandholdtimesameasotherinputs),theinternalclockissuspendedfromthenextclock
cycleandthestateofoutputandburstaddressisfrozenaslongastheCKEremainslow.Whenallbanks
areintheidlestate,deactivatingtheclockcontrolstheentrytothePowerDownandSelfRefreshmodes.
CKEissynchronousexceptafterthedeviceentersPowerDownandSelfRefreshmodes,whereCKE
becomesasynchronousuntilexitingthesamemode.Theinputbuffers,includingCLK,aredisabledduring
PowerDownandSelfRefreshmodes,providinglowstandbypower.
BA0, BA1
Input
Bank Select: BA0 and BA1 defines to which bank the BankActivate, Read, Write, or BankPrecharge
commandisbeingapplied.
A0-A12
Input
AddressInputs:A0-A12aresampledduringtheBankActivatecommand(rowaddressA0-A12)andRead/
Writecommand(columnaddressA0-A8withA10definingAutoPrecharge)toselectonelocationinthe
respectivebank.DuringaPrechargecommand,A10issampledtodetermineifallbanksaretobeprecharged
(A10=HIGH).
Theaddressinputsalsoprovidetheop-codeduringaModeRegisterSet.
CS
Input
ChipSelect:CSenables(sampledLOW)anddisables(sampledHIGH)thecommanddecoder.Allcommands
aremaskedwhenCSissampledHIGH.CSprovidesforexternalbankselectiononsystemswithmultiple
banks.Itisconsideredpartofthecommandcode.
RAS
Input
RowAddressStrobe:TheRASsignaldefinestheoperationcommandsinconjunctionwiththeCASand
WE
signalsandislatchedatthepositiveedgesofCLK.WhenRASandCSareasserted“LOW”andCAS
isasserted“HIGH,”eithertheBankActivatecommandorthePrechargecommandisselectedbytheWE
signal.WhentheWEisasserted“HIGH,”theBankActivatecommandisselectedandthebankdesignated
byBAisturnedontotheactivestate.WhentheWEisasserted“LOW,”thePrechargecommandisselected
andthebankdesignatedbyBAisswitchedtotheidlestateaftertheprechargeoperation.
CAS
Input
ColumnAddressStrobe:TheCASsignaldefinestheoperationcommandsinconjunctionwiththeRAS
andWEsignalsandislatchedatthepositiveedgesofCLK.WhenRASisheld“HIGH”andCSisasserted
“LOW,”thecolumnaccessisstartedbyassertingCAS”LOW.”Then,theReadorWritecommandisselected
byassertingWE“LOW”or“HIGH.”
WE
Input
WriteEnable:TheWEsignaldefinestheoperationcommandsinconjunctionwiththeRASandCASsignals
andislatchedatthepositiveedgesofCLK.TheWEinputisusedtoselecttheBankActivateorPrecharge
commandandReadorWritecommand.
DQM0-3
Input
DataInput/OutputMask:DQM0-DQM3arebytespecific,nonpersistentI/Obuffercontrols.TheI/Obuffers
areplacedinahigh-zstatewhenDQMissampledHIGH.InputdataismaskedwhenDQMissampled
HIGHduringawritecycle.Outputdataismasked(two-clocklatency)whenDQMissampledHIGHduring
areadcycle.DQM3masksDQ31-DQ24,DQM2masksDQ23-DQ16,DQM1masksDQ15-DQ8,andDQM0
masksDQ7-DQ0
DQ0-31
Input/ 
Output
DataI/O:TheDQ0-31inputandoutputdataaresynchronizedwiththepositiveedgeofCLK.TheI/Osare
byte-maskableduringReadsandWrites.
PIN DESCRIPTIONS


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