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IS61DDB44M18A Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc |
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IS61DDB44M18A Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc |
10 / 31 page IS61DDB44M18A IS61DDB42M36A Integrated Silicon Solution, Inc.- www.issi.com Rev. A 12/08/2014 10 State Diagram Power-Up NOP Load New Read Address D count = 0 DDR-II Read D count = D count +1 DDR-II Write D count = D count +1 Increment Read Address Increment Write Address Load Load Load Read Write Read D count = 1 Write D count = 1 Always Always /LOAD D count = 2 /LOAD D count = 2 /LOAD Notes: 1. Internal burst counter is fixed as four-bit linear; that is when first address is A0+0, next internal burst addresses are A0+1, A0+2, and A0+3 2. Read refers to read active status with R/W# = High. 3. Write refers to write active status with R/W# = LOW. 4. Load refers to read new address active status with LD# = low. 5. Load is read new address inactive status with LD = high. Linear Burst Sequence Table Burst Sequence Case1 Case2 Case3 Case4 SA1 SA0 SA1 SA0 SA1 SA0 SA1 SA0 First Address 0 0 0 1 1 0 1 1 Second Address 0 1 1 0 1 1 0 0 Third Address 1 0 1 1 0 0 0 1 Fourth Address 1 1 0 0 0 1 1 0 |
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