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IS66WV1M16EBLL Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc

Part # IS66WV1M16EBLL
Description  ULTRA LOW POWER PSEUDO CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS66WV1M16EBLL Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc

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IS66WV1M16EALL
IS66/67WV1M16EBLL
Rev. 0A | October 2014
www.issi.com - SRAM@issi.com
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
Parameter
-55
-70
Unit
Notes
Min
Max
Min
Max
tRC
Read cycle time
55
-
70
-
ns
tAA
Address Acess Time
-
55
-
70
ns
1
tOHA
Output Hold Time
10
-
10
-
ns
tACS1/ACS2
CS1#/CS2 Acess Time
-
55
-
70
ns
tDOE
OE# Access Time
-
25
-
35
ns
1
tHZOE
OE# to High-Z output
-
20
-
25
ns
2
tLZOE
OE# to Low-Z output
5
-
5
-
ns
2
tCSM
Maximum CS1#/CS2 pulse width
-
15
-
15
us
tHZCS1/HZCS2
CS1#/CS2 to High-Z output
0
20
0
25
ns
2
tLZCS1/HZCS2
CS1#/CS2 to Low-Z output
10
-
10
-
ns
2
tBA
UB#/LB# Acess Time
-
55
-
70
ns
1
tHZB
UB#/LB# to High-Z output
0
20
0
25
ns
2
tLZB
UB#/LB# to Low-Z output
0
-
0
-
ns
2
tCPH
CS1# HIGH (CS2 LOW) time
5
-
5
-
ns
AC WAVEFORMS
READ CYCLE NO. 1(1) (Address Controlled, OE#= VIL, WE#=VIH, UB# or LB# = VIL)
CS1#
CS2
tRC
Address
DQ 0-15
tOHA
tOHA
tAA
PREVIOUS DATA VALID
DATA VALID
tCSM
Notes:
1.
WE# is HIGH for a Read Cycle.
Notes:
1. Test conditions and output loading are specified in the AC Test Conditions and AC Test Loads (Figure 1) on page 5.
2. Tested with the load in Figure 2. Transition is measured ±100 mV from steady-state voltage. Not 100% tested.


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