10

IS66/67WVE2M16EALL/BLL/CLL

Rev. 0D | November 2014

www.issi.com - SRAM@issi.com

Low-Power Feature

Standby Mode Operation

During standby, the device current consumption is reduced to the level necessary to

perform the DRAM refresh operation. Standby operation occurs when CE# and ZZ# are HIGH.

The device will enter a reduced power state upon completion of a READ or WRITE

operations when the address and control inputs remain static for an extended period of time.

This mode will continue until a change occurs to the address or control inputs.

Temperature Compensated Refresh

Temperature compensated refresh (TCR) is used to adjust the refresh rate depending on the

device operating temperature. DRAM technology requires more frequent refresh operations to

maintain data integrity as temperatures increase. More frequent refresh is required due to the

increased leakage of the DRAM's capacitive storage elements as temperatures rise. A decreased

refresh rate at lower temperatures will result in a savings in standby current.

TCR allows for adequate refresh at four different temperature thresholds: +15°C, +45°C, +70°C,

and +85°C. The setting selected must be for a temperature higher than the case temperature of

the device. If the case temperature is +50°C, the system can minimize self refresh current

consumption by selecting the +70°C setting. The +15°C and +45°C settings would result in

inadequate refreshing and cause data corruption.