BV

R

DS(on) typ

I

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HRLD80N06K / HRLU80N06K

60V N-Channel Trench MOSFET

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

60

V

I

D

Drain Current

– Continuous (T

)

80 *

A

Drain Current

– Continuous (T

)

56 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

260 *

A

V

GS

Gate-Source Voltage

20

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

340

mJ

E

AR

Repetitive Avalanche Energy

(Note 1)

16

mJ

P

D

Power Dissipation (T

)*

3

W

Power Dissipation (T

)

- Derate above 25

160

W

1.07

W/

T

Operating and Storage Temperature Range

-55 to +175

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

1.Gate 2. Drain 3. Source

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

0.9

/W

R

JA

Junction-to-Ambient*

--

50

R

JA

Junction-to-Ambient

--

110

June 2015

2

1

2

3

1

3

D-PAK

I-PAK

HRLD80N06K HRLU80N06K

* When mounted on the minimum pad size recommended (PCB Mount)

Originative New Design

Superior Avalanche Rugged Technology

Excellent Switching Characteristics

Unrivalled Gate Charge : 100 nC (Typ.)

Extended Safe Operating Area

Lower R

(Typ.) @V

Lower R

(Typ.) @V

100% Avalanche Tested

* Drain current limited by maximum junction temperature