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HRLO85N10H Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HRLO85N10H Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
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1 / 7 page  ◎ SEMIHOW REV.A0,Fab 2016 Fab 2016 Absolute Maximum Ratings T J=25℃ unless otherwise specified Symbol Parameter Value Units V DSS Drain-Source Voltage 100 V V GS Gate-Source Voltage ±20 V I D Drain Current T A = 25℃ 14.0 A T A = 100℃ 8.9 A I DM Pulsed Drain Current 80 A E AS Single Pulsed Avalanche Energy L=0.1mH 80 mJ P D Power Dissipation T A = 25℃ 3.1 W T A = 70℃ 2.0 W T J, TSTG Operating and Storage Temperature Range -55 to +150 ℃ Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RθJL Junction-to-Lead -- 23 ℃/W RθJA Junction-to-Ambient (t ≤10s) -- 40 ℃/W Junction-to-Ambient (steady state) -- 75 ℃/W High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free SOP-8 Parameter Value Unit BVDSS 100 V ID 14 A RDS(on), typ @10V 7.1 mΩ RDS(on), typ @4.5V 8.4 mΩ Key Parameters Package & Internal Circuit HRLO85N10H 100V N-Channel Trench MOSFET Features Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductrial |
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