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BC808-40 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BC808-40 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 01.11.2003 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 BC 807 / BC 808 General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 310 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25 /C) Grenzwerte (T A = 25 /C) BC 807 BC 808 Collector-Emitter-voltage B open - V CE0 45 V 25 V Collector-Emitter-voltage B shorted - V CES 50 V 30 V Collector-Base-voltage E open - V CB0 50 V 30 V Emitter-Base-voltage C open - V EB0 5 V Power dissipation – Verlustleistung P tot 310 mW 1) Collector current – Kollektorstrom (DC) - I C 800 mA Peak Coll. current – Kollektor-Spitzenstrom - I CM 1000 mA Peak Base current – Basis-Spitzenstrom - I BM 200 mA Peak Emitter current – Emitter-Spitzenstrom I EM 1000 mA Junction temperature – Sperrschichttemperatur T j 150 /C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /C Characteristics, T j = 25 /C Kennwerte, T j = 25 /C Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis - V CE = 1 V, - IC = 100 mA BC807 BC808 h FE 100 – 600 - V CE = 1 V, - IC = 500 mA h FE 40 – – - V CE = 1 V, - IC = 100 mA Group -16 h FE 100 160 250 Group -25 h FE 160 250 400 Group -40 h FE 250 400 600 |
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Similar Description - BC808-40 |
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