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S1MLS Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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S1MLS Datasheet(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page CREAT BY ART - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM V VRMS V VDC V IF(AV) A TJ °C TSTG °C Document Number: DS_D1410013 Version: E15 600 800 1000 800 1000 1.3 5 150 Operating junction temperature range Storage temperature range - 55 to +150 IR Maximum reverse current @ rated VR TJ=25°C TJ=125°C Note 1: Pulse test with PW=300μs, 1% duty cycle - 55 to +150 Typical thermal resistance RθJC RθJA °C/W 26 74 μA A Maximum instantaneous forward voltage (Note 1) @ 1.2 A VF V Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1.2 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load UNIT Marking code Maximum repetitive peak reverse voltage Polarity: Indicated by cathode band Weight: 0.022g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL S1JLS S1KLS IFSM 50 S1MLS 1JLS 1KLS 1MLS 600 420 560 700 S1JLS - S1MLS Taiwan Semiconductor 1.2A, 600V - 1000V Surface Mount Rectifiers FEATURES Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: SOD-123HE SOD-123HE |
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