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ADG819BCB Datasheet(PDF) 2 Page - Analog Devices |
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ADG819BCB Datasheet(HTML) 2 Page - Analog Devices |
2 / 12 page REV. 0 –2– ADG819/ADG820–SPECIFICATIONS1 (V DD = 5 V 10%, GND = 0 V.) –40 C to –40 C to Parameter 25 C +85 C +125 C 2 Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V ON Resistance (RON) 0.5 Ω typ VS = 0 V to VDD, IS = 100 mA; 0.6 0.7 0.8 Ω max Test Circuit 1 ON Resistance Match Between Channels ( ∆R ON)0.06 Ω typ VS = 0 V to VDD, IS = 100 mA 0.08 0.1 0.12 Ω max ON Resistance Flatness (RFLAT(ON)) 0.1 Ω typ VS = 0 V to VDD, IS = 100 mA 0.17 0.2 0.25 Ω max LEAKAGE CURRENTS VDD = 5.5 V Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; ±0.25 ±3 ±10 nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V; ±0.25 ±3 ±25 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max CIN, Digital Input Capacitance 5 pF typ DYNAMIC CHARACTERISTICS 3 ADG819 tON 35 ns typ RL = 50 Ω, CL = 35 pF, 45 50 55 ns max VS = 3 V; Test Circuit 4 tOFF 10 ns typ RL = 50 Ω, C L = 35 pF, 16 18 21 ns max VS = 3 V; Test Circuit 4 Break-Before-Make Time Delay, tBBM 5 ns typ RL = 50 Ω, CL = 35 pF, 1 ns min VS1 = VS2 = 3 V; Test Circuit 5 ADG820 tON 10 ns typ RL = 50 Ω, CL = 35 pF, 18 20 22 ns max VS = 3 V; Test Circuit 4 tOFF 26 ns typ RL = 50 Ω, CL = 35 pF, 40 45 50 ns max VS = 3 V; Test Circuit 4 Make-Before-Break Time Delay, tMBB 15 ns typ RL = 50 Ω, C L = 35 pF, 1 ns min VS = 0 V; Test Circuit 6 Charge Injection 20 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; Test Circuit 7 Off Isolation –71 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Test Circuit 8 Channel-to-Channel Crosstalk –72 dB typ RL = 50 Ω, C L = 5 pF, f = 100 kHz; Test Circuit 10 Bandwidth –3 dB 17 MHz typ RL = 50 Ω, CL = 5 pF; Test Circuit 9 CS (OFF) 80 pF typ f = 1 MHz CD, CS (ON) 300 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 5.5 V Digital Inputs = 0 V or 5.5 V IDD 0.001 µA typ 1.0 2.0 µA max NOTES 1Temperature range is as follows: –40 °C to +125°C. 2ON resistance parameters tested with I S = 10 mA. 3Guaranteed by design, not subject to production test. Specifications subject to change without notice. |
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