ADG819BCB datasheet(2/12 Pages) AD

Part #	ADG819BCB

Description	0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

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REV. 0

–2–

ADG819/ADG820–SPECIFICATIONS1 (V

DD = 5 V

10%, GND = 0 V.)

–40 C to –40 C to

Parameter

25 C

+85 C

+125 C

2

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

V

ON Resistance (RON)

0.5

Ω typ

VS = 0 V to VDD, IS = 100 mA;

0.6

0.7

0.8

Ω max

Test Circuit 1

ON Resistance Match Between

Channels (

∆R

ON)0.06

Ω typ

VS = 0 V to VDD, IS = 100 mA

0.08

0.1

0.12

Ω max

ON Resistance Flatness (RFLAT(ON))

0.1

Ω typ

VS = 0 V to VDD, IS = 100 mA

0.17

0.2

0.25

Ω max

LEAKAGE CURRENTS

VDD = 5.5 V

Source OFF Leakage IS (OFF)

±0.01

nA typ

VS = 4.5 V/1 V, VD = 1 V/4.5 V;

±0.25

±3

±10

nA max

Test Circuit 2

Channel ON Leakage ID, IS (ON)

±0.01

nA typ

VS = VD = 1 V, or VS = VD = 4.5 V;

±0.25

±3

±25

nA max

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, VINH

2.0

V min

Input Low Voltage, VINL

0.8

V max

Input Current

IINL or IINH

0.005

µA typ

VIN = VINL or VINH

±0.1

µA max

CIN, Digital Input Capacitance

5

pF typ

DYNAMIC CHARACTERISTICS

3

ADG819

tON

35

ns typ

RL = 50

Ω, CL = 35 pF,

45

50

55

ns max

VS = 3 V; Test Circuit 4

tOFF

10

ns typ

RL = 50

Ω, C

L = 35 pF,

16

18

21

ns max

VS = 3 V; Test Circuit 4

Break-Before-Make Time Delay, tBBM

5

ns typ

RL = 50

Ω, CL = 35 pF,

1

ns min

VS1 = VS2 = 3 V; Test Circuit 5

ADG820

tON

10

ns typ

RL = 50

Ω, CL = 35 pF,

18

20

22

ns max

VS = 3 V; Test Circuit 4

tOFF

26

ns typ

RL = 50

Ω, CL = 35 pF,

40

45

50

ns max

VS = 3 V; Test Circuit 4

Make-Before-Break Time Delay, tMBB

15

ns typ

RL = 50

Ω, C

L = 35 pF,

1

ns min

VS = 0 V; Test Circuit 6

Charge Injection

20

pC typ

VS = 2.5 V, RS = 0

Ω, CL = 1 nF;

Test Circuit 7

Off Isolation

–71

dB typ

RL = 50

Ω, CL = 5 pF, f = 100 kHz;

Test Circuit 8

Channel-to-Channel Crosstalk

–72

dB typ

RL = 50

Ω, C

L = 5 pF, f = 100 kHz;

Test Circuit 10

Bandwidth –3 dB

17

MHz typ

RL = 50

Ω, CL = 5 pF; Test Circuit 9

CS (OFF)

80

pF typ

f = 1 MHz

CD, CS (ON)

300

pF typ

f = 1 MHz

POWER REQUIREMENTS

VDD = 5.5 V

Digital Inputs = 0 V or 5.5 V

IDD

0.001

µA typ

1.0

2.0

µA max

NOTES

1Temperature range is as follows: –40

°C to +125°C.

2ON resistance parameters tested with I

S = 10 mA.

3Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

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