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MTB017B03Q8 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTB017B03Q8 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C107Q8 Issued Date : 2016.03.01 Revised Date : Page No. : 5/9 MTB017B03Q8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=-250 μA ID=-1mA Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 1s 100 μs RDSON limited TA=25°C, Tj=175°C VGS=-10V, RθJA=62.5°C/W Single Pulse 10 Gate Charge Characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 Qg, Total Gate Charge(nC) ID=-8A VDS=-10V VDS=-15V Maximum Drain Current vs Junction Temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) TA=25°C, VGS=-10V, RθJA=62.5°C/W Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) Pulsed Ta=25°C VDS=-15V VDS=-10V |
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