MTB080P06J3-0-T3-G datasheet(3/9 Pages) CYSTEKEC

Part #	MTB080P06J3-0-T3-G

Description	P-Channel Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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3 / 9 page

CYStech Electronics Corp.

Spec. No. : C069J3

Issued Date : 2016.03.16

Revised Date :

Page No. : 3/ 9

MTB080P06J3

CYStek Product Specification

Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

-60

-

VGS=0V, ID=-250μA

VGS(th)

-1.0

-

-2.5

V

VDS =VGS, ID=-250μA

IGSS

-

±

100

nA

VGS=±20V, VDS=0V

-

-1

VDS =-48V, VGS =0V

IDSS

-

-25

μA

VDS =-48V, VGS =0V, TJ=85

°C

-

82.5

115

VGS =-10V, ID=-10A

RDS(ON) *1

-

104

150

mΩ

VGS =-5V, ID=-8A

GFS *1

-

11.5

-

S

VDS =-10V, ID=-10A

Dynamic

Qg *1, 2

-

11.5

17.5

Qgs *1, 2

-

2.4

-

Qgd *1, 2

-

2.9

-

nC

ID=-10A, VDS=-48V, VGS=-10V

td(ON) *1, 2

-

6.6

9.9

tr

*1, 2

-

17.4

26.1

td(OFF) *1, 2

-

26.2

39.3

tf

*1, 2

-

7.6

11.4

ns

VDS=-30V, ID=-10A, VGS=-10V,

RG=3Ω

Ciss

-

542

-

Coss

-

57

-

Crss

-

40

-

pF

VGS=0V, VDS=-25V, f=1MHz

Rg

-

5.3

-

Ω

f=1MHz

Source-Drain Diode Ratings and Characteristics

IS *1

-

-12.5

ISM *1

-

-45

A

VSD *1

-

-0.97

-1.2

V

IS=-10A, VGS=0V

trr

-

13

19.5

ns

Qrr

-

9.5

-

nC

IF=-10A, dIF/dt=100A/μs

Note : *1.Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Recommended soldering footprint

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MTB080P06J3-0-T3-G Datasheet(PDF) 3 Page - Cystech Electonics Corp.

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