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FMC6G30US60 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FMC6G30US60 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  ©2000 Fairchild Semiconductor International FMC6G30US60 Rev. A Electrical Characteristics of IGBT @ Inverter T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆B VCES/ ∆T J Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 30mA, VCE = VGE 5.0 6.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 30A, VGE = 15V -- 2.2 2.8 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 1970 -- pF Coes Output Capacitance -- 310 -- pF Cres Reverse Transfer Capacitance -- 74 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 25°C -- 30 -- ns tr Rise Time -- 65 -- ns td(off) Turn-Off Delay Time -- 54 80 ns tf Fall Time -- 138 200 ns Eon Turn-On Switching Loss -- 0.92 -- mJ Eoff Turn-Off Switching Loss -- 0.82 -- mJ Ets Total Switching Loss -- 1.74 2..4 mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 125°C -- 34 -- ns tr Rise Time -- 67 -- ns td(off) Turn-Off Delay Time -- 60 90 ns tf Fall Time -- 281 400 ns Eon Turn-On Switching Loss -- 0.93 -- mJ Eoff Turn-Off Switching Loss -- 1.56 -- mJ Ets Total Switching Loss -- 2.49 3.4 mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- us Qg Total Gate Charge VCE = 300 V, IC = 30A, VGE = 15V -- 85 120 nC Qge Gate-Emitter Charge -- 17 25 nC Qgc Gate-Collector Charge -- 39 55 nC |
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