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AN-1086 Datasheet(PDF) 4 Page - International Rectifier

Part # AN-1086
Description  Application Note
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

AN-1086 Datasheet(HTML) 4 Page - International Rectifier

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4
AN-1086
When the edge of depletion layer width of the reverse biased P+/N- junction approaches the P+
collector of the IGBT, injection of holes will occur causing
and results in breakdown when the
undepleted drift region portion (Wn) is less than one hole diffusion length. In this case open
base transistor BVceo occurs when the product of electron multiplication coefficient and base transport
factor becomes equal to unity. It can be demonstrated (Ref 1, pg 352) that
BV
B
ceoB = VBBB (1-αBTB)P
1/6
Were V
B
BB = Avalanche Breakdown Voltage of the PP
+
P
N
P
-
P
junction,
α
B
TB = Base Transport Factor = 1 / cosh [ (WBnB / Sqrt (DBpBτBpB) ]
W
B
nB= Undepleted Base Width, DBpB = Hole Diffusion Coefficient, τBp = BHole Carrier Lifetime.
In order to reduce conduction and switching losses, short N
P
-
P
base and N Depletion Stop are required,
along with high carrier lifetime to insure sufficient conductivity modulation of the N- base. As a result
high base transport factor is achieved. The short N- base could also result in BVceo-type of
characteristics, which cause looping behavior in static BV.
The looping phenomenon is non
destructive as long as the current is limited within the SOA capability of the device. If the current
source used in an automatic tester (typically used in final probe and assembly) to perform the BV test
has a high Voltage compliant, the variable load will result in uncontrolled repetitive current spikes that
can damage the device. See Figure 4 for normal and loopy static BV waveforms as seen on a curve
tracer.
When the loopy BV phenomenon occurs, it can be seen that the leakage current is low (40~60nA at
25C) up to the onset of avalanche breakdown, approx 700V. As soon as the impact ionization process
starts, the secondary holes are injected into the base triggering the PNP transistor into BVceo mode.
After the open base transistor breakdown the current through the N-drift region increases and
this can result in depletion extension and further reduction of undepleted portion of the base
(Wn). The depletion extension can be estimated by comparing the leakage current to the Kirk
current density (Ref 2 p 224). Overall impact of this is increase in
α
B
TB and further reduction in
voltage across the IGBT. This leads to device exhibiting negative resistance where voltage
decreases with increasing current.
Due to the constant power provided by the curve tracer, the negative resistance developed as the
avalanche current increases results in Current / Voltage looping. This looping will result in inconsistent
break down voltage readings. Repetitive measurements can potentially damage the IGBT under test.


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