DTC144TT1 datasheet(2/8 Pages) ONSEMI

Part #	DTC144TT1

Description	NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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Manufacturer	ONSEMI [ON Semiconductor]

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DTC144TT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

–

100

nAdc

Collector-Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

–

500

nAdc

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

–

0.2

mAdc

Collector-Base Breakdown Voltage

(IC = 10 µA, IE = 0)

V(BR)CBO

50

–

Vdc

Collector-Emitter Breakdown Voltage (Note 1)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

–

Vdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

hFE

160

350

–

Collector-Emitter Saturation Voltage

(IC = 10 mA, IB = 1 mA)

VCE(sat)

–

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

VOL

–

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)

VOH

4.9

–

Vdc

Input Resistor

R1

32.9

47

61.1

k

Ω

1. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

Figure 1. Derating Curve

350

200

150

100

50

0

–50

0

50

100

150

TA, AMBIENT TEMPERATURE (°C)

RθJA = 370°C/W

250

300

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