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M37736EHBGS Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor

Part # M37736EHBGS
Description  PROM VERSION OF M37736EHBXXXGP
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M37736EHBGS Datasheet(HTML) 7 Page - Mitsubishi Electric Semiconductor

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7
PROM VERSION OF M37736MHBXXXGP
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
MITSUBISHI MICROCOMPUTERS
M37736EHBXXXGP
M67736EHBGS
FUNCTION IN EPROM MODE
1M mode (equivalent to the M5M27C101K)
Reading
___
___
To read the EPROM, set the CE and OE pins to a “L” level. Input the
address of the data (A0 – A16) to be read, and the data will be output
to the I/O pins D0 – D7. The data I/O pins will be floating when either
__
__
the CE or OE pins are in the “H” state.
Programming
Programming must be performed in 8 bits by a byte program. To
___
___
program to the EPROM, set the CE pin to a “L” level and the OE pin to
a “H” level. The CPU will enter the programming mode when 12.5 V
is applied to the VPP pin. The address to be programmed to is selected
with pins A0 – A16, and the data to be programmed is input to pins D0
_____
– D7. Set the PGM pin to a “L” level to being programming.
Erasing
To erase data on this chip, use an ultraviolet light source with a 2537
Angstrom wave length. The minimum radiation power necessary for
erasing is 15 J/cm2.
Programming operation
To program the M37733EHBXXXFP, first set VCC = 6 V, VPP = 12.5
V, and set the address to 0100016. Apply a 0.2 ms programming
pulse, check that the data can be read, and if it cannot be read OK,
repeat the procedure, applying a 0.2 ms programming pulse and
checking that the data can be read until it can be read OK. Record
the accumulated number of pulse applied (X) before the data can be
read OK, and then write the data again, applying a further once this
number of pulses (0.2 ! X ms).
When this series of programming operations is complete, increment
the address, and continue to repeat the procedure above until the
last address has been reached.
Finally, when all addresses have been programmed, read with VCC =
VPP = 5 V (or VCC = VPP = 5.5 V).
Table 2. I/O signal in each mode
Read-out
Output
Disable
Programming
Programming
Verify
Program Disable
VIL
VIL
VIH
VIL
VIL
VIH
VIL
VIH
X
VIH
VIL
VIH
X
X
X
VIL
VIH
VIH
5 V
5 V
5 V
12.5 V
12.5 V
12.5 V
5 V
5 V
5 V
6 V
6 V
6 V
Output
Floating
Floating
Input
Output
Floating
___
CE
___
OE
_____
PGM
VPP
VCC
Data I/O
Mode
Pin
Note 1 : An X indicates either VIL or VIH.
Programming operation (equivalent to the M5M27C101K)
AC ELECTRICAL CHARACTERISTICS (Ta = 25 ± 5 °C, VCC = 6 V ± 0.25 V, VPP = 12.5 ± 0.3 V, unless otherwise noted)
Address setup time
___
OE
setup time
Data setup time
Address hold time
Data hold time
Output enable to output float delay
VCC setup time
VPP setup time
_____
PGM
pulse width
_____
PGM
over program pulse width
___
CE
setup time
__
Data valid from OE
µs
µs
µs
µs
µs
ns
µs
µs
ms
ms
µs
ns
tAS
tOES
tDS
tAH
tDH
tDFP
tVCS
tVPS
tPW
tOPW
tCES
tOE
Min.
2
2
2
0
2
0
2
2
0.19
0.19
2
Typ.
0.2
Max.
130
0.21
5.25
150
Symbol
Parameter
Test conditions
Limits
Unit


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