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BD949F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BD949F
Description  Complement to Type BD950F/952F/954F/956F
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD949F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BD949F/951F/953F/955F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD949F
IC= 100mA ; IB= 0
60
V
BD951F
80
BD953F
100
BD955F
120
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 2A; VCE= 4V
1.4
V
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
VCB=
1/
2VCBOmax; IE= 0,TJ=150℃
0.05
1
mA
ICEO
Collector Cutoff Current
VCE=
1/
2VCEOmax; IB= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.2
mA
hFE-1
DC Current Gain
IC= 500mA ; VCE= 4V
40
hFE-2
DC Current Gain
IC= 2A ; VCE= 4V
20
fT
Current-Gain—Bandwidth Product
IC= 500mA ; VCE= 4V
3
MHz
Switching Times
ton
Turn-On Time
IC= 1.0A; IB1= -IB2= 0.1A
0.3
μs
toff
Turn-Off Time
1.5
μs


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