HCU70R600S datasheet(3/8 Pages) SEMIHOW

Part #	HCU70R600S

Description	700V N-Channel Super Junction MOSFET

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

0

10

1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

Bottom : 5.0 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

048

12

16

0.0

0.4

0.8

1.2

1.6

V

GS = 20V

V

GS = 10V

Note : T

J = 25

oC

I

D, Drain Current [A]

10

-1

10

0

10

1

0

1000

2000

3000

4000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

2468

10

0.1

1

10

-25

oC

25

oC

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

150

oC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1

10

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

150

oC

0

3

6

9

12

15

18

0

2

4

6

8

10

12

V

DS = 350V

V

DS = 140V

V

DS = 560V

Note : I

D = 7.3A

Q

G, Total Gate Charge [nC]

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HCU70R600S Datasheet(PDF) 3 Page - SemiHow Co.,Ltd.

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