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CLC425A8B Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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CLC425A8B Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 9 page CLC425 Electrical Characteristics (V CC = ±5V; AV = +20; Rf =499 Ω Ω Ω Ω Ω; R g = 26.1 Ω Ω Ω Ω Ω; R L = 100 Ω Ω Ω Ω Ω; unless noted) PARAMETERS CONDITIONS TYP MIN/MAX RATINGS UNITS SYMBOL Ambient Temperature CLC425 AJ +25°C -40°C +25°C +85°C FREQUENCY DOMAIN RESPONSE gain bandwidth product Vout < 0.4Vpp 1.9 1.5 1.5 1.0 GHz GBW -3dB bandwidth Vout < 0.4Vpp 95 75 75 50 MHz SSBW V out < 5.0Vpp 40 30 30 20 MHz LSBW gain flatness Vout < 0.4Vpp peaking DC to 30MHz 0.3 0.7 0.5 0.7 dB GFP rolloff DC to 30MHz 0.1 0.7 0.5 0.7 dB GFR linear phase deviation DC to 30MHz 0.7 1.5 1.5 2.5 ° LPD TIME DOMAIN RESPONSE rise and fall time 0.4V step 3.7 4.7 4.7 7.0 ns TRS settling time to 0.2% 2V step 22 30 30 40 ns TSS overshoot 0.4V step 5 12 10 12 % OS slew rate 2V step 350 250 250 200 V/ µsSR DISTORTION AND NOISE RESPONSE 2nd harmonic distortion 1V pp, 10MHz - 53 48 48 46 dBc HD2 3rd harmonic distortion 1Vpp, 10MHz - 75 65 65 60 dBc HD3 3rd order intermodulation intercept 10MHz 35 dBm IMD equivalent noise input voltage 1MHz to 100MHz 1.05 1.25 1.25 1.8 nV/ √Hz VN current 1MHz to 100MHz 1.6 4.0 2.5 2.5 pA/ √Hz ICN noise figure R S = 700 Ω 0.9 dB NF STATIC DC PERFORMANCE open-loop gain DC 96 77 86 86 dB AOL *input offset voltage ± 100 ± 1000 ± 800 ± 1000 µV VIO average drift ± 2 8 ____ 4 µV/°C DVIO *input bias current 12 40 20 20 µAIB average drift - 100 - 250 ____ - 120 nA/°C DIB input offset current ± 0.2 3.4 2.0 2.0 µA IIO average drift ± 3 ± 50 ____ ± 25 nA/°C DIIO power supply rejection ratio DC 95 82 88 86 dB PSRR common mode rejection ratio DC 100 88 92 90 dB CMRR *supply current RL= ∞ 15 18 16 16 mA ICC MISCELLANEOUS PERFORMANCE input resistance common-mode 2 0.6 1.6 1.6 M Ω RINC differential-mode 6 1 3 3 k Ω RIND input capacitance common-mode 1.5 2 2 2 pF CINC differential-mode 1.9 3 3 3 pF CIND output resistance closed loop 5 50 10 10 m Ω ROUT output voltage range RL= ∞ ±3.8 ±3.5 ±3.7 ±3.7 V VO RL=100 Ω ±3.4 ±2.8 ±3.2 ±3.2 V VOL input voltage range common mode ± 3.8 ± 3.4 ± 3.5 ± 3.5 V CMIR output current source 80 70 70 70 mA IOP sink 80 45 55 55 mA ION Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters. http://www.national.com 2 Absolute Maximum Ratings Miscellaneous Ratings V cc ±7V I out short circuit protected to ground, however maximum reliabiliy is obtained if I out does not exceed... 125mA common-mode input voltage ±V cc maximum junction temperature +150°C operating temperature range: AJ -40°C to +85°C storage temperature range -65°C to +150°C lead temperature (soldering 10 sec) +300°C ESD (human body model) 1000V Recommended gain range ±10 to ±1,000V/V Notes: * AJ : 100% tested at +25°C. Package Thermal Resistance Package θθθθθ JC θθθθθ JA AJP 70°C/W 125°C/W AJE 65°C/W 145°C/W A8B 45°C/W 135°C/W AJM5 115°C/W 185°C/W Reliability Information Transistor count 31 |
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