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2SK1280 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1280 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK1280 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= 0V; ID=10mA 2.1 3.0 4.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=9A 0.35 0.50 Ω IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 500 uA VSD Diode Forward Voltage IF=18A; VGS=0 0.85 1.6 V tr Rise time VGS=10V;ID=18A;RL=25Ω 150 220 ns ton Turn-on time 185 270 ns tf Fall time 180 270 ns toff Turn-off time 630 900 ns PDF pdfFactory Pro www.fineprint.cn |
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