IRL1104

PD -91805

q

Logic-Level Gate Drive

q

Advanced Process Technology

q

Ultra Low On-Resistance

q

Dynamic dv/dt Rating

q

175°C Operating Temperature

q

Fast Switching

q

Fully Avalanche Rated

…

S

D

G

10/19/99

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

0.9

Case-to-Sink, Flat, Greased Surface

––––

0.50

––––

°C/W

Junction-to-Ambient

––––

––––

62

Thermal Resistance

Description

Parameter

Max.

Units

104

…

74

A

Pulsed Drain Current



416

Power Dissipation

167

W

Linear Derating Factor

1.1

W/°C

Gate-to-Source Voltage

±16

V

Single Pulse Avalanche Energy

‚

340

mJ

Avalanche Current



62

A

Repetitive Avalanche Energy



17

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon area.

This benefit, combined with the fast

switching speed and ruggedized device design that

the designer with an extremely efficient device for use in a

wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

www.irf.com

1

TO-220AB