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IRL1104 Datasheet(PDF) 1 Page - International Rectifier |
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IRL1104 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET IRL1104 PD -91805 q Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated VDSS = 40V RDS(on) = 0.008Ω ID = 104A S D G 10/19/99 Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 0.9 RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W RθJA Junction-to-Ambient –––– –––– 62 Thermal Resistance Description Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A IDM Pulsed Drain Current 416 PD @TC = 25°C Power Dissipation 167 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy 340 mJ IAR Avalanche Current 62 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. www.irf.com 1 TO-220AB |
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