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CLC5612IM Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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CLC5612IM Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 18 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage (V CC) ±7V Supply Voltage (V CC -VEE) +14V Output Current (see (Note 4)) 140mA Common-Mode Input Voltage V EE to VCC Maximum Junction Temperature +150˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature (soldering 10 sec) +300˚C +5 Electrical Characteristics (A V= +2, RL = 100Ω,VS +5V 1,V CM =VEE +(VS/2), RL tied to Vcm, unless specified) Symbol Parameter Conditions Typ Min/Max Ratings (Note 2) Units Ambient Temperature CLC5612IN/IM +25˚C +25˚C 0 to 70˚C −40 to 85˚C Frequency Domain Response -3dB Bandwidth V O = 0.5VPP 75 50 50 50 MHz V O = 2.0VPP 62 57 54 52 MHz −0.1dB Bandwidth V O = 0.5VPP 18 13 11 11 MHz Gain Peaking <200MHz, V O = 0.5VPP 0 0.5 0.9 1.2 dB Gain Rolloff <30MHz, V O = 0.5VPP 0.2 0.9 1.0 1.0 dB Linear Phase Deviation <30MHz, V O = 0.5VPP 0.1 0.4 0.5 0.5 deg Differential Gain NTSC, R L = 150Ω to −1V 0.09 – – – % Differential Phase NTSC, R L = 150Ω to −1V 0.14 – – – deg Time Domain Response Rise and Fall Time 2V Step 5.5 9.0 9.7 10.5 ns Settling Time to 0.05% 1V Step 20 28 45 70 ns Overshoot 2V Step 3 6.5 14 14 % Slew Rate 2V Step 185 150 130 120 V/µs Distortion And Noise Response 2nd Harmonic Distortion 2V PP,1MHz −74 −70 −67 −67 dBc 2V PP,1MHz; RL =1KΩ −79 −77 −72 −72 dBc 2V PP,5MHz −65 −58 −58 −58 dBc 3rd Harmonic Distortion 2V PP,1MHz −86 −82 −79 −79 dBc 2V PP,1MHz; RL =1kΩ −81 −79 −76 −76 dBc 2V PP,5MHz −60 −55 −53 −53 dBc Equivalent Input Noise Voltage (e ni) >1MHz 3.4 4.4 4.9 4.9 nV/ Non-Inverting Current (i bn) >1MHz 6.3 8.2 9.0 9.0 pA/ Inverting Current (i bi) >1MHz 8.7 11.3 12.4 12.4 pA/ Crosstalk (Input Referred) >10MHz, 1V PP −80 - - - dB Static, DC Performance Input Offset Voltage (Note 3) 8 30 35 35 mV Average Drift 80 - - - µV/˚C Input Bias Current (Non-Inverting)(Note 3) 3 141818 µA Average Drift 25 - - - nA/˚C Gain Accuracy (Note 3) ±0.3 ±1.5 ±2.0 ±2.0 % Internal Resistors (R f,Rg) 1000 ±20% ±26% ±30% Ω Power Supply Rejection Ratio DC 48 45 43 43 dB www.national.com 3 |
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