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CLC5612IM Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # CLC5612IM
Description  Dual, High Output, Programmable Gain Buffer
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

CLC5612IM Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC)
±7V
Supply Voltage (V
CC -VEE)
+14V
Output Current (see (Note 4))
140mA
Common-Mode Input Voltage
V
EE to VCC
Maximum Junction Temperature
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature (soldering 10 sec)
+300˚C
+5 Electrical Characteristics
(A
V= +2, RL = 100Ω,VS +5V
1,V
CM =VEE +(VS/2), RL tied to Vcm, unless specified)
Symbol
Parameter
Conditions
Typ
Min/Max Ratings
(Note 2)
Units
Ambient Temperature
CLC5612IN/IM
+25˚C
+25˚C
0 to
70˚C
−40 to
85˚C
Frequency Domain Response
-3dB Bandwidth
V
O = 0.5VPP
75
50
50
50
MHz
V
O = 2.0VPP
62
57
54
52
MHz
−0.1dB Bandwidth
V
O = 0.5VPP
18
13
11
11
MHz
Gain Peaking
<200MHz, V
O = 0.5VPP
0
0.5
0.9
1.2
dB
Gain Rolloff
<30MHz, V
O = 0.5VPP
0.2
0.9
1.0
1.0
dB
Linear Phase Deviation
<30MHz, V
O = 0.5VPP
0.1
0.4
0.5
0.5
deg
Differential Gain
NTSC, R
L = 150Ω to
−1V
0.09
%
Differential Phase
NTSC, R
L = 150Ω to
−1V
0.14
deg
Time Domain Response
Rise and Fall Time
2V Step
5.5
9.0
9.7
10.5
ns
Settling Time to 0.05%
1V Step
20
28
45
70
ns
Overshoot
2V Step
3
6.5
14
14
%
Slew Rate
2V Step
185
150
130
120
V/µs
Distortion And Noise Response
2nd Harmonic Distortion
2V
PP,1MHz
−74
−70
−67
−67
dBc
2V
PP,1MHz; RL =1KΩ
−79
−77
−72
−72
dBc
2V
PP,5MHz
−65
−58
−58
−58
dBc
3rd Harmonic Distortion
2V
PP,1MHz
−86
−82
−79
−79
dBc
2V
PP,1MHz; RL =1kΩ
−81
−79
−76
−76
dBc
2V
PP,5MHz
−60
−55
−53
−53
dBc
Equivalent Input Noise
Voltage (e
ni)
>1MHz
3.4
4.4
4.9
4.9
nV/
Non-Inverting Current (i
bn)
>1MHz
6.3
8.2
9.0
9.0
pA/
Inverting Current (i
bi)
>1MHz
8.7
11.3
12.4
12.4
pA/
Crosstalk (Input Referred)
>10MHz, 1V
PP
−80
-
-
-
dB
Static, DC Performance
Input Offset Voltage (Note 3)
8
30
35
35
mV
Average Drift
80
-
-
-
µV/˚C
Input Bias Current
(Non-Inverting)(Note 3)
3
141818
µA
Average Drift
25
-
-
-
nA/˚C
Gain Accuracy (Note 3)
±0.3
±1.5
±2.0
±2.0
%
Internal Resistors (R
f,Rg)
1000
±20%
±26%
±30%
Power Supply Rejection Ratio
DC
48
45
43
43
dB
www.national.com
3


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