SI4966DY datasheet(1/4 Pages) VISHAY

Part #	SI4966DY

Description	Dual N-Channel 2.5-V (G-S) MOSFET

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Si4966DY

Vishay Siliconix

Document Number: 70718

S-54939—Rev. A, 29-Sep-97

www.vishay.com

S FaxBack 408-970-5600

2-1

Dual N-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

20

0.025 @ VGS = 4.5 V

"7.1

20

0.035 @ VGS = 2.5 V

"6.0

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

N-Channel MOSFET

D1 D1

G1

S1

N-Channel MOSFET

D2 D2

G2

S2

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

"7.1

A

Continuous Drain Current (TJ = 150 C)a

TA = 70_C

ID

"5.7

A

Pulsed Drain Current (10

ms Pulse Width)

IDM

"40

A

Continuous Source Current (Diode Conduction)a

IS

1.7

Maximum Power Dissipationa

TA = 25_C

PD

2

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambienta

RthJA

62.5

_C/W

Notes

a.

Surface Mounted on FR4 Board, t

v 10 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

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