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2SK1971 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1971 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK1971 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 500 V V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 100μA ±20 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA 2 3 V VDF Body to drain diode forward voltage IF = 35A, VGS = 0 1.1 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 18A 0.19 0.23 Ω IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±10 µA IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 250 µA Ciss Input capacitance VDS=10V;VGS=0V; fT=1MHz 4320 pF Crss Reverse transfer capacitance 130 Coss Output capacitance 1120 tr Rise time VGS=10V;ID=5A; VDD=200V; RL=6Ω 170 ns ton Turn-on time 50 tf Fall time 130 toff Turn-off time 320 PDF pdfFactory Pro www.fineprint.cn |
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