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CMPSH-3S Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part # CMPSH-3S
Description  SCHOTTKY BARRIER DIODE
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Manufacturer  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

CMPSH-3S Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
CMPSH-3
SCHOTTKY BARRIER DIODE
FEATURES
High Switching Speed
Low Forward Voltage
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
30
V
IO
Continuous Forward Current
100
mA
IFRM
Peak Repetitive Forward Current
350
mA
IFSM
Non-repetitive Peak Forward
Surge Current @ t=8.3ms
750
mA
PD
Power Dissipation
350
mW
RθJA
Thermal Resistance from Junction to Ambient
286
℃/W
Tj
Junction Temperature
125
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Reverse voltage
V(BR)
IR=100μA
30
V
Reverse current
IR
VR=25V
0.5
μA
IF=2mA
0.33
IF=15mA
0.45
Forward voltage
VF
IF=100mA
1
V
Total capacitance
Ctot
VR=1V,f=1MHz
7
pF
Reverse recovery time
trr
IF= IR=10mA, Irr=0.1×IR, RL=100Ω
5
ns
SOT-23
1
C,Oct,2015
www.cj-elec.com
MARKING:
CMPSH-3
CMPSH-3A
CMPSH-3C
CMPSH-3S
CMPSH-3
CMPSH-3A
CMPSH-3C
CMPSH-3S


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