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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
2SK2025-01
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
600
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=1mA
2.5
3.0
3.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 2A
2.0
2.4
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
500
µA
Ciss
Input Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
1000
1500
pF
Crss
Reverse Transfer Capacitance
20
30
Coss
Output Capacitance
85
130
tr
Rise Time
VGS=10V;
ID=4A;
VDD=300V;
RL=10Ω
15
25
ns
td(on)
Turn-on Delay Time
20
30
tf
Fall Time
15
25
td(off)
Turn-off Delay Time
45
70
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