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IRF7341 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7341
Description  HEXFET Power MOSFET
Download  7 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7341 Datasheet(HTML) 2 Page - International Rectifier

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IRF7341
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.059 –––
V/°C
Reference to 25°C, ID = 1mA
––– 0.043 0.050
VGS = 10V, ID = 4.7A
„
––– 0.056 0.065
VGS = 4.5V, ID = 3.8A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
7.9
–––
–––
S
VDS = 10V, ID = 4.5A
–––
–––
2.0
VDS = 55V, VGS = 0V
–––
–––
25
VDS = 55V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
24
36
ID = 4.5A
Qgs
Gate-to-Source Charge
–––
2.3
3.4
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
7.0
10
VGS = 10V, See Fig. 10
„
td(on)
Turn-On Delay Time
–––
8.3
12
VDD = 28V
tr
Rise Time
–––
3.2
4.8
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
32
48
RG = 6.0Ω
tf
Fall Time
–––
13
20
RD = 16Ω,
„
Ciss
Input Capacitance
–––
740
–––
VGS = 0V
Coss
Output Capacitance
–––
190
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
71
–––
ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
StaticDrain-to-SourceOn-Resistance
IDSS
Drain-to-SourceLeakageCurrent
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 2.0A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
60
90
ns
TJ = 25°C, IF = 2.0A
Qrr
Reverse RecoveryCharge
–––
120
170
nC
di/dt = -100A/µs
ƒ
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
38
2.0
A
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ I
SD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 6.5mH
RG = 25Ω, IAS = 4.7A. (See Figure 8)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec
S
D
G


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