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IRL5602S Datasheet(PDF) 2 Page - International Rectifier |
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IRL5602S Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRL5602S 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.4 V TJ = 25°C, IS = -12A, VGS = 0V trr Reverse Recovery Time ––– 58 88 ns TJ = 25°C, IF = -12A Qrr Reverse RecoveryCharge ––– 54 81 nC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD £ -12A, di/dt £ 120A/µs, VDD £ V(BR)DSS, TJ £ 175°C Notes: Starting T J = 25°C, L = 3.0mH RG = 25W, IAS = -14A. (See Figure 12) Pulse width £ 300µs; duty cycle £ 2%. Source-Drain Ratings and Characteristics -24 -96 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– -0.013 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.042 VGS = -4.5V, ID = -12A ––– ––– 0.062 W VGS = -2.7V, ID = -10A ––– ––– 0.075 VGS = -2.5V, ID = -10A VGS(th) Gate Threshold Voltage -0.7 ––– -1.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 12 ––– ––– S VDS = -15V, ID = -12A ––– ––– -25 VDS = -20V, VGS = 0V ––– ––– -250 VDS = -16V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 500 nA VGS = -8.0V Gate-to-Source Reverse Leakage ––– ––– -500 VGS = 8.0V Qg Total Gate Charge ––– ––– 44 ID = -12A Qgs Gate-to-Source Charge ––– ––– 8.7 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 19 VGS = -4.5V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 9.7 ––– VDD = -10 V tr Rise Time ––– 73 ––– ID = -12A td(off) Turn-Off Delay Time ––– 53 ––– RG = 6.0 W, VGS = 4.5V tf Fall Time ––– 84 ––– RD = 0.8 W, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 1460 ––– VGS = 0V Coss Output Capacitance ––– 790 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 370 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS RDS(on) Static Drain-to-Source On-Resistance LS Internal Source Inductance 7.5 ns IDSS Drain-to-Source Leakage Current µA S D G ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. |
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