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HO-P-001G Datasheet(PDF) 8 Page - LEM |
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HO-P-001G Datasheet(HTML) 8 Page - LEM |
8 / 15 page Page 8/15 16July2015/Version 5 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice www.lem.com HO 60 .. 250-P series Electrical data HO 240-P-0100 At T A = 25 °C, UC = +5 V, RL = 10 kΩ unless otherwise noted (see Min, Max, typ. definition paragraph in page 13). Parameter Symbol Unit Min Typ Max Comment Primary nominal rms current I PN A 240 Primary current, measuring range I PM A −600 600 @ U C ≥ 4.6 V Number of primary turns N P - 1 See application information Supply voltage 1) U C V 4.5 5 5.5 Current consumption I C mA 19 25 Reference voltage (output) V ref V 2.48 2.5 2.52 Internal reference Reference voltage (input) V ref V 0.5 2.65 External reference Output voltage range @ I PM V out − Vref V −2 2 Over operating temperature range V ref output resistance R ref Ω 130 200 300 Series V out output resistance R out Ω 2 5 Series Allowed capacitive load C L nF 0 6 OCD output: On resistance R on Ω 70 95 150 Open drain, active low Over operating temperature range OCD output: Hold time t hold ms 0.7 1 1.4 Additional time after threshold has released EEPROM control V out mV 0 50 V out forced to GND when EEPROM in an error state 2) Electrical offset voltage @ I P = 0 A V OE mV −5 5 V out − Vref @ Vref = 2.5 V Electrical offset current Referred to primary I OE A −1.5 1.5 Temperature coefficient of V ref TCV ref ppm/K −170 170 −40 °C … 105 °C Temperature coefficient of V OE TCV OE mV/K −0.075 0.075 −40 °C … 105 °C Offset drift referred to primary @ I P = 0 A TCI OE mA/K −22.5 22.5 −40 °C … 105 °C Theoretical sensitivity G th mV/A 3.333 800 mV @ I PN Sensitivity error @ I PN ε G % −0.5 0.5 Factory adjustment (straight bus-bar) Temperature coefficient of G TCG ppm/K −350 350 −40 °C … 105 °C Linearity error 0 … I PN ε L % of I PN −0.5 0.5 Linearity error 0 … I PM ε L % of I PM −0.5 0.5 Magnetic offset current (@ 10 × I PN) referred to primary I OM A −0.92 0.92 One turn Reaction time @ 10 % of I PN t ra µs 2.5 @ 50 A/µs Response time @ 90 % of I PN t r µs 3.5 @ 50 A/µs Frequency bandwidth (−3 dB) BW kHz 100 Small signals Output rms voltage noise (spectral density) (100 Hz … 100 kHz) e no 3.5 Output voltage noise (DC … 10 kHz) (DC … 100 kHz) (DC … 1 MHz) V no mVpp 2.5 5 8.7 Over-current detect A 2.64 × I PN 2.93 × I PN 3.22 × I PN Peak value ±10 % Accuracy @ I PN X % of I PN −1 1 Accuracy @ I PN @ TA = +105 °C X % of I PN −4.55 4.55 See formula note 3) Accuracy @ I PN @ TA = +85 °C X % of I PN −3.66 3.66 See formula note 3) Notes: 1) 3.3 V SP version available 2) EEPROM in an error state makes the transducer behave like a reverse current saturation. Use of the OCD may help to differentiate the two cases 3) µV/ Hz √ X TA = X + ( TCG 10000 TCI OE 1000 × I P × 100 × (T A – 25)). Accuracy @ (% of I PN) × ( T A – 25) + |
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