FEATURES

• Glass passivated junction

• Bidirectional

• 40000W Peak Pulse Power

capability on 10x1000 μs waveform

• Excellent clamping capability

• Repetition rate (duty cycle):0.05%

• Sharp breakdown voltage

• Low incremental surge resistance

• Fast response time: typically less

than 1.0 ps from 0 volts to BV

• Typical IR less than 20μA above 10V

• Operation Tempature: -55°C to +150°C

See Demensions on Page 4

MECHANICAL DATA

Terminals: Ag Plated Axial leads, solderable per

MIL-STD-750, Method 2026

Mounting Position: Any

Weight: 1.490 ± 0.149g (0.053 ± 0.005 ounces)

DEVICES FOR BIPOLAR APPLICATIONS

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

Peak Pulse Power Dissipation on 10/1000 μs

waveform

Pppm

Minimum 20000

Watts

Peak Pulse Current of on 10-1000 μs waveform

Ippm

SEE CURVE

Amps

HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE

STAND-OFF VOLTAGE 12 to 150 Volts

40000 Watt Peak Pulse Power

UNITS

Bidirectional use CA Suffix. Electrical characteristics apply in both directions.

Unidirectional A Suffix available as a special order

MAX™ 40 Cell Series

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414

1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com

5/21/2009