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AN-500 Datasheet(PDF) 6 Page - IXYS Corporation |
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AN-500 Datasheet(HTML) 6 Page - IXYS Corporation |
6 / 10 page INTEGRATED CIRCUITS DIVISION 6 www.ixysic.com R03 AN-500 3.5 Voltage Ramp Generator Applications such as high voltage sweep circuits and automatic test equipment require high voltage ramps with a linear relationship between output voltage and time. The circuit shown in Figure 7 utilizes one depletion-mode MOSFET to design a voltage-ramp generator circuit. Figure 7 High Voltage Ramp Generator with Depletion-Mode and Enhancement-Mode N-Channel MOSFETs Q1 is configured as a constant current source charging a capacitor, C1; R1 provides negative feedback to regulate and set the desired current value. The constant current source charges the capacitor C1, and generates a voltage ramp, VOUT, across the capacitor. Q2 can be turned on with a TTL or a CMOS control signal to reset the ramp voltage by discharging the capacitor to ground through R2. Resistor R2 is used to limit the discharge current for Q2 to operate within its SOA rating. Assume the ramp voltage: The value of capacitor C1 should be small enough to reduce excessive charging and discharging of energy, but large enough that output loads and stray capacitances will not introduce significant errors. C1 is chosen to be 1nF. The charging current is defined as: The value of R1 for a 100 A current source can be approximated: Where: • V GS = Pinch-off voltage = -1.75V @ desired IDS(on) • I DSS = Saturation current = 100mA, typical • I D = 100A Time (ms) 0123456789 10 0 100 200 300 400 500 600 V OUT 0 10 20 30 40 50 60 V IN +V DD Q1 CPC3980 D S R1 17k Ω C1 1nF I D V OUT R2 25k Ω Q2 IXTP02N120P V IN G dV dt -------0.1V/ s = IC1 dV dt ------- = Equation (3) I 1nF 0.1V/ s 100 A == R1 VGS ID --------- ID IDSS ---------- 1 – |
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