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AN-500 Datasheet(PDF) 6 Page - IXYS Corporation

Part # AN-500
Description  Depletion-Mode Power MOSFETs and Applications
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

AN-500 Datasheet(HTML) 6 Page - IXYS Corporation

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INTEGRATED CIRCUITS DIVISION
6
www.ixysic.com
R03
AN-500
3.5
Voltage Ramp Generator
Applications such as high voltage sweep circuits and automatic test equipment require high voltage ramps with a
linear relationship between output voltage and time. The circuit shown in
Figure 7 utilizes one depletion-mode
MOSFET to design a voltage-ramp generator circuit.
Figure 7
High Voltage Ramp Generator with Depletion-Mode and Enhancement-Mode N-Channel MOSFETs
Q1 is configured as a constant current source charging a capacitor, C1; R1 provides negative feedback to regulate
and set the desired current value. The constant current source charges the capacitor C1, and generates a voltage
ramp, VOUT, across the capacitor. Q2 can be turned on with a TTL or a CMOS control signal to reset the ramp
voltage by discharging the capacitor to ground through R2. Resistor R2 is used to limit the discharge current for Q2
to operate within its SOA rating.
Assume the ramp voltage:
The value of capacitor C1 should be small enough to reduce excessive charging and discharging of energy, but
large enough that output loads and stray capacitances will not introduce significant errors. C1 is chosen to be 1nF.
The charging current is defined as:
The value of R1 for a 100
A current source can be approximated:
Where:
V
GS = Pinch-off voltage = -1.75V @ desired IDS(on)
I
DSS = Saturation current = 100mA, typical
I
D = 100A
Time (ms)
0123456789
10
0
100
200
300
400
500
600
V
OUT
0
10
20
30
40
50
60
V
IN
+V
DD
Q1
CPC3980
D
S
R1
17k
Ω
C1
1nF
I
D
V
OUT
R2
25k
Ω
Q2
IXTP02N120P
V
IN
G
dV
dt
-------0.1V/
s
=
IC1
dV
dt
-------
=
Equation (3)
I
1nF 0.1V/
s
100
A
==
R1
VGS
ID
---------
ID
IDSS
---------- 1





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