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IS62LV256-45JI Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc

Part # IS62LV256-45JI
Description  32K x 8 LOW VOLTAGE STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS62LV256-45JI Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc

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IS62LV256
ISSI®
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. K
12/11/02
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2,3) (Over Operating Range)
-45 ns
-70 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
45
70
ns
tSCE
CE to Write End
35
60
ns
tAW
Address Setup Time to Write End
25
60
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Setup Time
0
0
ns
tPWE(4)
WE Pulse Width
25
55
ns
tSD
Data Setup to Write End
20
30
ns
tHD
Data Hold from Write End
0
0
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
4. Tested with
OE HIGH.


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