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DS2003 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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DS2003 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page  Absolute Maximum Ratings (Note 1) If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Storage Temperature Range Ceramic DIP b 65 Cto a175 C Molded DIP b 65 Cto a150 C Operating Temperature Range DS2003MDS9667M b 55 Cto a125 C DS2004M b 55 Cto a125 C DS2003TDS9667T b 40 Cto a105 C DS2004T b 40 Cto a105 C DS2003CDS9667C 0 Cto a85 C DS2004C 0 Cto a85 C Lead Temperature Ceramic DIP (Soldering 60 seconds) 300 C Molded DIP (Soldering 10 seconds) 265 C Maximum Power Dissipation at 25 C Cavity Package 2016 mW Molded Package 1838 mW SO Package 926 mW Derate cavity package 1613 mW C above 25 C derate molded DIP pack- age 147 mW C above 25 C Derate SO package 74 mW C Input Voltage 30V Output Voltage 55V Emitter-Base Voltage 60V Continuous Collector Current 500 mA Continuous Base Current 25 mA Electrical Characteristics TA e 25 C unless otherwise specified (Note 2) Symbol Parameter Conditions Min Typ Max Units ICEX Output Leakage TA e 25 C VCE e 50V (Figure 1a) 20 Current TA e 85 C VCE e 50V (Figure 1a) for Commercial Grade 100 m A TA e 25 C VCE e 50V VI e 10V (Figure 1b) DS2004 500 VCE(Sat) Collector-Emitter IC e 350 mA IB e 500 mA (Figure 2) (Note 3) 125 16 Saturation Voltage IC e 200 mA IB e 350 mA (Figure 2) 11 13 V IC e 100 mA IB e 250 mA (Figure 2) 09 11 II(ON) Input Current VI e 385V (Figure 3) DS2003DS9667 093 135 mA VI e 50V (Figure 3) DS2004 035 05 VI e 12V (Figure 3) 10 145 II(OFF) Input Current TA e 85 C for Commercial 50 100 m A (Note 4) IC e 500 mA (Figure 4) VI(ON) Input Voltage VCE e 20V IC e 200 mA (Figure 5) DS2003DS9667 24 (Note 5) VCE e 20V IC e 250 mA (Figure 5) 27 VCE e 20V IC e 300 mA (Figure 5) 30 V VCE e 20V IC e 125 mA (Figure 5) DS2004 50 VCE e 20V IC e 200 mA (Figure 5) 60 VCE e 20V IC e 275 mA (Figure 5) 70 VCE e 20V IC e 350 mA (Figure 5) 80 CI Input Capacitance 15 30 pF tPLH Turn-On Delay 05 VI to 05 VO 10 m s tPHL Turn-Off Delay 05 VI to 05 VO 10 m s IR Clamp Diode VR e 50V (Figure 6) TA e 25 C50 m A Leakage Current TA e 85 C 100 m A VF Clamp Diode IF e 350 mA (Figure 7) 17 20 V Forward Voltage Note 1 ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed They are not meant to imply that the devices should be operated at these limits The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation Note 2 All limits apply to the complete Darlington series except as specified for a single device type Note 3 Under normal operating conditions these units will sustain 350 mA per output with VCE (Sat) e 16V at 70 C with a pulse width of 20 ms and a duty cycle of 30% Note 4 The II(OFF) current limit guaranteed against partial turn-on of the output Note 5 The VI(ON) voltage limit guarantees a minimum output sink current per the specified test conditions http www nationalcom 2 |
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