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1PS79SB31 Datasheet(PDF) 2 Page - NXP Semiconductors |
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1PS79SB31 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2002 Jan 11 2 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB31 FEATURES • Very low forward voltage • Guard ring protected • Ultra small SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Low current rectification • Low power consumption applications (e.g. hand-held devices). DESCRIPTION Planar Schottky barrier diode in a SOD523 (SC-79) ultra small SMD plastic package. handbook, halfpage ka Top view MAM403 Fig.1 Simplified outline SOD523 (SC-79) and symbol. Marking code: G3. The marking bar indicates the cathode. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current t = 8.3 ms half sine wave; JEDEC method − 1000 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C |
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