2002 Jan 11

2

Philips Semiconductors

Product specification

Schottky barrier diode

1PS79SB31

FEATURES

• Very low forward voltage

• Guard ring protected

• Ultra small SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Low current rectification

• Low power consumption applications (e.g. hand-held

devices).

DESCRIPTION

Planar Schottky barrier diode in a SOD523 (SC-79) ultra

small SMD plastic package.

handbook, halfpage

ka



Top view

MAM403

Fig.1

Simplified outline SOD523 (SC-79) and

symbol.

Marking code: G3.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

30

V

continuous forward current

−

200

mA

repetitive peak forward current

−

300

mA

non-repetitive peak forward current

t = 8.3 ms half sine wave;

JEDEC method

−

1000

mA

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C