ADS7810

SBAS014A – MARCH 1992 – REVISED SEPTEMBER 2010

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION

For the most current package and ordering information, see the Package Option Addendum located at the end of

this data sheet, or see the device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range (unless otherwise noted).

ADS7810

UNIT

±25

V

AnalogREF

V

Indefinite Short to AGND2

AnalogCAP

V

Ground voltage differences: DGND, AGND1, AGND2

±0.3

V

+7

V

+0.3

V

+7

V

–7

V

Digital inputs

V

Maximum junction temperature

+165

°C

Internal power dissipation

825

mW

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum rated conditions for extended periods may affect device reliability.

2

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