IRF431 datasheet(2/2 Pages) ISC

Part #	IRF431

Description	isc N-Channel MOSFET Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

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isc N-Channel Mosfet Transistor

IRF431

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=0.25mA

450

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250µA

2

4

V

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=2.5A

2.0

Ω

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=450V; VGS=0

250

uA

VSD

Diode Forward Voltage

IF=4.5A; VGS=0

1.4

V

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

600

pF

Crss

Reverse Transfer Capacitance

100

Coss

Output Capacitance

30

tr

Rise Time

ID=4.5A;

VDD=250V;

RG=12Ω

11

17

ns

td(on)

Turn-on Telay Time

15

23

tf

Fall Time

35

53

td(off)

Turn-off Delay Time

15

23

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