2SK3131 datasheet(2/6 Pages) TOSHIBA

Part #	2SK3131

Description	Field Effect Transistor Silicon N Channel MOS Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK3131

2004-07-06

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±25 V, VDS = 0 V

—

±10

µA

Gate−source breakdown voltage

V (BR) GSS

IG = ±100 µA, VDS = 0 V

±30

—

V

Drain cut−off current

IDSS

VDS = 500 V, VGS = 0 V

—

100

µA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

500

—

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.4

—

3.4

V

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 25 A

—

0.085

0.11

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 25 A

15

35

—

S

Input capacitance

Ciss

—

11000

—

Reverse transfer capacitance

Crss

—

2100

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

4200

—

pF

Rise time

tr

—

105

—

Turn−on time

ton

—

160

—

Fall time

tf

—

65

—

Switching time

Turn−off time

toff

—

245

—

ns

Total gate charge (Gate−source

plus gate−drain)

Qg

—

280

—

Gate−source charge

Qgs

—

150

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 50 A

—

130

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

50

A

Pulse drain reverse current

(Note 1)

IDRP

—

200

A

Forward voltage (diode)

VDSF

VDR = 25 A, VGS = 0 V

—

−1.7

V

Reverse recovery time

trr

—

105

—

ns

Reverse recovery charge

Qrr

IDR = 50 A, VGS = 0 V

dIDR / dt = 100 A / µs

—

380

—

nC

Marking

2SK3131

TOSHIBA

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

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