bq24296M

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SLUSBU3A – FEBRUARY 2014 – REVISED JANUARY 2015

Pin Functions (continued)

PIN

TYPE

DESCRIPTION

NAME

NUMBER

SYS

15,16

I

System connection point. The internal BATFET is connected between BAT and SYS. When the battery falls below

the minimum system voltage, switch-mode converter keeps SYS above the minimum system voltage.

PGND

17,18

P

Power ground connection for high-current power converter node. Internally, PGND is connected to the source of the

n-channel LSFET. On PCB layout, connect directly to ground connection of input and output capacitors of the

charger. A single point connection is recommended between power PGND and the analog GND near the IC PGND

pin.

SW

19,20

O

Switching node connecting to output inductor. Internally SW is connected to the source of the n-channel HSFET and

the drain of the n-channel LSFET. Connect the 0.047-µF bootstrap capacitor from SW to BTST.

BTST

21

P

PWM high side driver positive supply. Internally, the BTST is connected to the anode of the boost-strap diode.

Connect the 0.047-µF bootstrap capacitor from SW to BTST.

REGN

22

P

PWM low side driver positive supply output. Internally, REGN is connected to the cathode of the boost-strap diode.

Connect a 4.7-µF (10-V rating) ceramic capacitor from REGN to analog GND. The capacitor should be placed close

to the IC. REGN also serves as bias rail of TS pin.

PMID

23

O

Connected to the drain of the reverse blocking MOSFET and the drain of HSFET. Given the total input capacitance,

connect a 1-µF capacitor on VBUS to PGND, and the recommended 8.2 µF or more on PMID to PGND.

Thermal Pad

–

P

Exposed pad beneath the IC for heat dissipation. Always solder thermal pad to the board, and have vias on the

thermal pad plane star-connecting to PGND and ground plane for high-current power converter.

7 Specifications

7.1 Absolute Maximum Ratings

(1)

MIN

MAX

UNIT

VBUS (converter not switching)

–2

V

PMID (converter not switching)

–0.3

V

STAT, PG

–0.3

12

V

BTST

–0.3

12

V

SW

–2

7

V

Voltage

8 (Peak

(with respect to GND)

for 20ns

duration)

BAT, SYS (converter not switching)

–0.3

6

V

SDA, SCL, INT, OTG, ILIM, REGN, TS, QON, CE PSEL

–0.3

7

V

BTST TO SW

–0.3

7

V

PGND to GND

–0.3

0.3

V

Output sink current

INT, STAT, PG

6

mA

Junction temperature

–40

150

°C

–65

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage

values are with respect to the network ground pin unless otherwise noted.

(2)

VBUS is specified up to 16 V for a maximum of 24 hours under no load conditions.

7.2 ESD Ratings

VALUE

UNIT

1000

V

Electrostatic discharge

Charged device model (CDM), per JEDEC specification JESD22-

250

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

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