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BQ25120 Datasheet(PDF) 10 Page - Texas Instruments |
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BQ25120 Datasheet(HTML) 10 Page - Texas Instruments |
10 / 68 page 10 BQ25120, BQ25121 SLUSBZ9B – AUGUST 2015 – REVISED MAY 2016 www.ti.com Product Folder Links: BQ25120 BQ25121 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated Electrical Characteristics (continued) Circuit of , V(UVLO) < VIN < V(OCP) and VIN > V(BAT) + V(SLP), TJ = –40 to 85°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT R(DSCH_LSL DO) MOSFET on-resistance for LS/LDO discharge 1.7V < V(VINLS) < 6.6 V, ILOAD = –10 mA 30 Ω I(OCL_LDO) Output Current Limit – LDO VLS/LDO = 0.9 x VLS/LDO(NOM) 275 365 450 mA I(LS/LDO) Output Current V(VINLS) = 3.6 V, VLSLDO = 3.3 V 100 mA V(VINLS) = 3.3 V, VLSLDO = 0.8 V 100 mA V(VINLS) = 2.2 V, VLSLDO = 0.8 V 10 mA IIN(LDO) Quiescent current for VINLS in LDO mode 0.9 µA OFF-state supply current 0.25 µA VIH(LSCTRL) High-level input voltage for LSCTRL 1.15 V > V(VINLS) > 6.6 V 0.75 x V(SYS) 6.6 V VIL(LSCTRL) Low-level input voltage for LSCTRL 1.15 V > V(VINLS) > 6.6 V 0.25 x V(SYS) V PUSHBUTTON TIMER (MR) VIL Low-level input voltage 0.3 V RPU Internal pull-up resistance 120 k Ω VBAT MONITOR VBMON Battery Voltage Monitor Accuracy V(BAT) Falling - Including 2% increment –3.5 3.5 %V(BATREG) BATTERY-PACK NTC MONITOR VHOT High temperature threshold VTS falling, 1% VIN Hysteresis bq25120 14.5 15 15.2 %VIN bq25121 VWARM Warm temperature threshold VTS falling, 1% VIN Hysteresis bq25120 20.1 20.5 20.8 %VIN bq25121 20.2 20.6 20.9 VCOOL Cool temperature threshold VTS rising, 1% VIN Hysteresis bq25120 35.4 36 36.4 %VIN bq25121 35.5 36.1 36.5 VCOLD Low temperature threshold VTS rising, 1% VIN Hysteresis bq25120 39.3 39.8 40.2 %VIN bq25121 39.5 40 40.3 TSOFF TS Disable threshold VTS rising, 2% VIN Hysteresis bq25120 55 60 %VIN bq25121 PROTECTION V(UVLO) IC active threshold voltage VIN rising 3.4 3.6 3.8 V VUVLO(HYS) IC active hysteresis VIN falling from above VUVLO 150 mV V(BUVLO) Battery Undervoltage Lockout threshold Range Programmable Range for V(BUVLO) VBAT falling, 200 mV Hysteresis 2.2 3.0 V Default Battery Undervoltage Lockout Accuracy V(BAT) falling –2.5% 2.5% V(BATSHORT ) Battery short circuit threshold Battery voltage falling 2 V V(BATSHORT _HYS) Hysteresis for V(BATSHORT) 100 mV I(BATSHORT) Battery short circuit charge current I(PRETERM) mA V(SLP) Sleep entry threshold, VIN – V(BAT) 2 V < VBAT < V(BATREG), VIN falling 65 120 mV V(SLP_HYS) Sleep-mode exit hysteresis VIN rising above V(SLP) 40 65 100 mV VOVP Maximum Input Supply OVP threshold voltage VIN rising, 100 mV hysteresis 5.35 5.55 5.75 V tDGL_OVP Deglitch time, VIN OVP falling VIN falling below VOVP, 1V/us 32 ms TSHTDWN Thermal trip VIN > VUVLO 114 °C |
Similar Part No. - BQ25120_16 |
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Similar Description - BQ25120_16 |
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