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74LVC2G32 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # 74LVC2G32
Description  Dual 2-input OR gate
Download  14 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74LVC2G32 Datasheet(HTML) 2 Page - NXP Semiconductors

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2004 Sep 22
2
Philips Semiconductors
Product specification
Dual 2-input OR gate
74LVC2G32
FEATURES
• Wide supply voltage range from 1.65 V to 5.5 V
• 5 V tolerant outputs in the Power-down mode
• High noise immunity
• Complies with JEDEC standard:
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
– JESD8B/JESD36 (2.7 V to 3.6 V).
•±24 mA output drive (VCC = 3.0 V)
• CMOS low power consumption
• Latch-up performance exceeds 250 mA
• Direct interface with TTL levels
• Inputs accept voltages up to 5 V
• Multiple package options
• ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from −40 °C to +85 °C and −40 °C to +125 °C.
DESCRIPTION
The 74LVC2G32 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This
feature allows the use of these devices as translators in a
mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC2G32 provides the 2-input OR gate.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPHL/tPLH
propagation delay
inputs nA, nB to output nY
VCC = 1.8 V; CL = 30 pF; RL =1kΩ
3.9
ns
VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 2.4
ns
VCC = 2.7 V; CL = 50 pF; RL = 500 Ω 2.7
ns
VCC = 3.3 V; CL = 50 pF; RL = 500 Ω 2.2
ns
VCC = 5.0 V; CL = 50 pF; RL = 500 Ω 1.7
ns
CI
input capacitance
2.5
pF
CPD
power dissipation capacitance per gate
VCC = 3.3 V; notes 1 and 2
14
pF


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