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CSD17556Q5B Datasheet(PDF) 6 Page - Texas Instruments

Part # CSD17556Q5B
Description  30 V N-Channel NexFET Power MOSFET
Download  13 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17556Q5B Datasheet(HTML) 6 Page - Texas Instruments

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10
100
300
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
0.0
50.0
100.0
150.0
200.0
250.0
300.0
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature (ºC)
Silicon limited
Package limited
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
0.1
1
10
100
1000
5000
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
Single Pulse
Max RthetaJC = 1.3ºC/W
G001
CSD17556Q5B
SLPS392B – MARCH 2013 – REVISED OCTOBER 2014
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
Figure 9. Typical Diode Forward Voltage
Figure 10. Maximum Safe Operating Area (SOA)
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
6
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