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CSD17556Q5B Datasheet(PDF) 1 Page - Texas Instruments |
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CSD17556Q5B Datasheet(HTML) 1 Page - Texas Instruments |
1 / 13 page 0 1 2 3 4 5 6 0 2 4 6 8 10 12 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 30A TC = 125ºC Id = 30A G001 0 2 4 6 8 10 0 10 20 30 40 50 60 70 Qg - Gate Charge (nC) ID = 30A VDS =15V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17556Q5B SLPS392B – MARCH 2013 – REVISED OCTOBER 2014 CSD17556Q5B 30 V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Extremely Low Resistance TA = 25°C TYPICAL VALUE UNIT • Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V • Low Thermal Resistance Qg Gate Charge Total (4.5 V) 30 nC Qgd Gate Charge Gate-to-Drain 7.5 nC • Avalanche Rated VGS = 4.5 V 1.5 m Ω • Pb Free Terminal Plating RDS(on) Drain-to-Source On-Resistance VGS = 10 V 1.2 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.4 V • Halogen Free • SON 5 mm × 6 mm Plastic Package Ordering Information(1) Device Qty Media Package Ship 2 Applications CSD17576Q5B 2500 13-Inch Reel SON 5 × 6 mm Tape and Plastic Package Reel • Point of Load Synchronous Buck in Networking, CSD17576Q5BT 250 13-Inch Reel Telecom, and Computing Systems (1) For all available packages, see the orderable addendum at • Synchronous Rectification the end of the data sheet. • Active ORing and Hotswap Applications Absolute Maximum Ratings TA = 25°C VALUE UNIT 3 Description VDS Drain-to-Source Voltage 30 V This 30 V, 1.2 m Ω, 5 × 6 mm NexFET™ power VGS Gate-to-Source Voltage ±20 V MOSFET is designed to minimize losses in Continuous Drain Current (Package limited) 100 synchronous rectification and other power conversion A Continuous Drain Current (Silicon limited), applications. ID 215 TC = 25°C Continuous Drain Current(1) 34 A Top View IDM Pulsed Drain Current, TA = 25°C (1)(2) 400 A Power Dissipation(1) 3.1 PD W Power Dissipation, TC = 25°C 191 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 500 mJ ID = 100 A, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 40°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB (2) Max RθJC = 1.3°C/W, Pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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