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CSD18532Q5BT Datasheet(PDF) 5 Page - Texas Instruments

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Part # CSD18532Q5BT
Description  60V N-Channel NexFET Power MOSFETs
Download  14 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD18532Q5BT Datasheet(HTML) 5 Page - Texas Instruments

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background image
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
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VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 25A
TC = 125ºC Id = 25A
G001
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Qg - Gate Charge (nC)
ID = 25A
VDS = 30V
G001
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
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VDS - Drain-to-Source Voltage (V)
VGS =10V
VGS =6.5V
VGS =4.5V
G001
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
CSD18532Q5B
www.ti.com
SLPS322B – NOVEMBER 2012 – REVISED JULY 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
Figure 4. Gate Charge
Figure 5. Capacitance
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Copyright © 2012–2014, Texas Instruments Incorporated
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