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CSD19533Q5A Datasheet(PDF) 1 Page - Texas Instruments |
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CSD19533Q5A Datasheet(HTML) 1 Page - Texas Instruments |
1 / 14 page 0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 13A TC = 125°C,I D = 13A G001 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 Qg - Gate Charge (nC) ID = 13A VDS = 50V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19533Q5A SLPS486A – DECEMBER 2013 – REVISED MAY 2014 CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-Source Voltage 100 V • Avalanche Rated Qg Gate Charge Total (10 V) 27 nC Qgd Gate Charge Gate to Drain 4.9 nC • Pb-Free Terminal Plating VGS = 6 V 8.7 m Ω • RoHS Compliant RDS(on) Drain-to-Source On Resistance VGS = 10 V 7.8 m Ω • Halogen Free VGS(th) Threshold Voltage 2.8 V • SON 5-mm × 6-mm Plastic Package . 2 Applications Ordering Information(1) • Primary Side Telecom Device Media Qty Package Ship CSD19533Q5A 13-Inch Reel 2500 • Secondary Side Synchronous Rectifier SON 5 x 6 mm Tape and Plastic Package Reel CSD19533Q5AT 7-Inch Reel 250 • Motor Control (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 100 V, 7.8 m Ω, SON 5 mm × 6 mm NexFET™ Absolute Maximum Ratings power MOSFET is designed to minimize losses in TA = 25°C VALUE UNIT power conversion applications. VDS Drain-to-Source Voltage 100 V Top View VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), ID 75 A TC = 25°C Continuous Drain Current, TA = 25 °C (1) 13 IDM Pulsed Drain Current, TA = 25 °C (2) 231 A Power Dissipation(1) 3.2 PD W Power Dissipation, TC = 25°C 96 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 106 mJ ID = 46 A, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 40 °C/W on a 1-inch 2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB. (2) Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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Similar Description - CSD19533Q5A_16 |
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