BQ4015LYMA-70 datasheet(8/15 Pages) TI1

8 / 15 page

High−Z

Address

Data Valid

High−Z

OE

DOUT

tRC

tOE

tOLZ

tAA

tOHZ

bq4015/Y/LY

SLUS125B – MAY 1999 – REVISED JANUARY 2010

www.ti.com

(1)

WE is held high for a read cycle.

(2)

Device is continuously selected: CE = VIL.

Figure 7. Read Cycle No. 3 (OE Access)

8

Submit Documentation Feedback

Product Folder Link(s): bq4015/Y/LY

Not Recommended For New Designs

Similar Part No. - BQ4015LYMA-70

Manufacturer	Part #	Datasheet	Description
Texas Instruments	BQ4015LYMA-70N	345Kb / 16P	[Old version datasheet] 512 k 횞 8 NONVOLATILE SRAM (5 V, 3.3 V)

Manufacturer	Part #	Datasheet	Description
Texas Instruments	BQ4015LYMA-70N	345Kb / 16P	[Old version datasheet] 512 k 횞 8 NONVOLATILE SRAM (5 V, 3.3 V)
	BQ4010	354Kb / 16P	[Old version datasheet] 8 k 쨈 8 NONVOLATILE SRAM (5 V, 3.3 V)
	BQ4010	178Kb / 18P	[Old version datasheet] 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V)
	BQ4013	164Kb / 15P	[Old version datasheet] 128 k X 8 NONVOLATILE SRAM (5 V, 3.3 V)
	BQ4013	336Kb / 15P	[Old version datasheet] 128 k 쨈 8 NONVOLATILE SRAM (5 V, 3.3 V)
	BQ4011	353Kb / 16P	[Old version datasheet] 32 k 쨈 8 NONVOLATILE SRAM (5 V, 3.3 V)
STMicroelectronics	M48Z512BV	195Kb / 20P	3.3 V, 4 Mbit (512 K x 8 bit) ZEROPOWER SRAM
Cypress Semiconductor	CY14E256LA	730Kb / 19P	256-Kbit (32 K 횞 8) Nonvolatile SRAM
	CY7C09089V99V	652Kb / 28P	3.3 V 32 K/64 K/128 K 횞 8/9
	CY7C0831AV	526Kb / 31P	FLEx18??3.3 V 128 K / 256 K / 512 K 횞 18 Synchronous Dual-Port RAM