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BQ51050BRHLT Datasheet(PDF) 9 Page - Texas Instruments |
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BQ51050BRHLT Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 43 page  9 bq51050B, bq51051B, bq51052B www.ti.com SLUSB42E – JULY 2012 – REVISED MARCH 2015 Product Folder Links: bq51050B bq51051B bq51052B Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Electrical Characteristics (continued) Over junction temperature range 0°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCTRL-LOW Voltage on CTRL pin for a low 0 0.1 V tTS/CTRL-Meas Time period of TS/CTRL measurements (when VTSB is being driven internally) TS bias voltage is only driven when communication packets are sent 24 ms tTS-Deglitch Deglitch time for all TS comparators 10 ms NTC-Pullup Pullup resistor for the NTC network. Pulled up to the TS bias LDO. 18 20 22 k Ω NTC-RNOM Nominal resistance requirement at 25°C of the NTC resistor 10 k Ω NTC-Beta Beta requirement for accurate temperature sensing through the above specified thresholds 3380 Ω THERMAL PROTECTION TJ-SD Thermal shutdown temperature 155 °C TJ-Hys Thermal shutdown hysteresis 20 °C OUTPUT LOGIC LEVELS ON CHG VOL Open-drain CHG pin ISINK = 5 mA 500 mV IOFF,CHG CHG leakage current when disabled VCHG = 20 V, 0°C ≤ TJ ≤ 85°C 1 µA COMM PIN RDS- ON(COMM) COMM1 and COMM2 VRECT = 2.6 V 1 Ω fCOMM Signaling frequency on COMM pin 2 kb/s IOFF,COMM COMM pin leakage current VCOMM1 = 20 V, VCOMM2 = 20 V 1 µA CLAMP PIN RDS- ON(CLAMP) CLAMP1 and CLAMP2 0.75 Ω ADAPTER ENABLE VAD-Pres VAD Rising threshold voltage. EN-UVLO VAD 0 V → 5 V 3.5 3.6 3.8 V VAD-PresH VAD-Pres hysteresis, EN-HYS VAD 5 V → 0 V 400 mV IAD Input leakage current VRECT = 0 V, VAD = 5 V 60 µA RAD Pullup resistance from AD-EN to BAT when adapter mode is disabled and VBAT > VAD, EN-OUT VAD = 0 V, VBAT = 5 V 200 350 Ω VAD-Diff Voltage difference between VAD and VAD-EN when adapter mode is enabled, EN-ON VAD = 5 V, 0°C ≤ TJ ≤ 85°C 3 4.5 5 V SYNCHRONOUS RECTIFIER IBAT-SR IBAT at which the synchronous rectifier enters half synchronous mode, SYNC_EN IBAT 200 mA → 0 mA bq51050B, bq51051B 80 115 140 mA bq51052B 20 50 65 IBAT-SRH Hysteresis for IBAT,SR (full-synchronous mode enabled) IBAT 0 mA → 200 mA bq51050B, bq51051B 25 bq51052B 28 VHS-DIODE High-side diode drop when the rectifier is in half synchronous mode IAC-VRECT = 250 mA, and TJ = 25°C 0.7 V EN2 VIL Input low threshold for EN2 0.4 V VIH Input high threshold for EN2 1.3 V RPD, EN EN2 pulldown resistance 200 k Ω ADC PowerREC Received power measurement 0 W – 5 W received power after calibration of Rx magnetics losses 0.25 W |
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