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BQ7790501PW Datasheet(PDF) 6 Page - Texas Instruments |
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BQ7790501PW Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 45 page  6 bq77904, bq77905 SLUSCM3A – JUNE 2016 – REVISED JUNE 2016 www.ti.com Product Folder Links: bq77904 bq77905 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) bq77904 bq77905 UNITS PW (TSSOP) 16 PINS θJA Junction-to-ambient thermal resistance TBD °C/W θJCtop Junction-to-case (top) thermal resistance TBD θJB Junction-to-board thermal resistance TBD ψJT Junction-to-top characterization parameter TBD ψJB Junction-to-board characterization parameter TBD θJCbot Junction-to-case (bottom) thermal resistance TBD (1) Based on a 10 KΩ pull-up and 103AT thermistor. 7.5 Electrical Characteristics Typical values stated at TA = 25ºC and VDD = 16 V (bq77904) or 20 V (bq77905). MIN and MAX values stated with TA = –40ºC to 85ºC and VDD = 3 to 20 V (bq77904) or VDD = 3 to 25 V (bq77905) unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE V(POR) POR threshold VDD rising, 0 to 6 V 4 V V(SHUT) Shutdown threshold VDD falling, 6 to 0 V 2 3.25 V V(AVDD) AVDD voltage C(VDD) = 1 µF 2.1 2.5 3.25 V SUPPLY AND LEAKAGE CURRENT ICC Normal mode current (bq77904/bq77905) Cell1 through Cell5 = 4 V, VDD = 20 V (bq77905) 6 9 µA I(CFAULT) Fault condition current State comparator on 8 12 µA IOFF Shutdown mode current VDD < VSHUT 0.5 µA ILKG(OW_DIS) Input leakage current at VCx pins All cell voltages = 4 V, Open Wire disable configuration –100 0 100 nA ILKG(100nA) Open-wire sink current at VCx pins All cell voltages = 4 V, 100 nA configuration 30 110 175 nA ILKG(200nA) Open-wire sink current at VCx pins All cell voltages = 4 V, 200 nA configuration 95 210 315 nA ILKG(400nA) Open-wire sink current at VCx pins All cell voltages = 4 V, 400 nA configuration 220 425 640 nA PROTECTION ACCURACIES VOV Overvoltage programmable threshold range 3000 4575 mV VUV Undervoltage programmable threshold range 1200 3000 mV V(VA) OV, UV, detection accuracy TA = 25ºC, OV detection accuracy –10 10 mV TA = 25ºC, UV detection accuracy –18 18 mV TA = 0 to 60ºC –28 26 mV TA = –40 to 85ºC –40 40 mV VHYS(OV) OV hysteresis programmable threshold range 0 400 mV VHYS(UV) UV hysteresis programmable threshold range 200 800 mV VOTD Overtemperature in discharge programmable threshold Threshold for 65°C(1) 17.48 20.56 23.64 %VTB Threshold for 70°C (1) 15.49 18.22 20.95 %VTB |
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