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TIC246N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # TIC246N
Description  isc Triacs
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIC246N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  TIC246N Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc Triacs
TIC246N
FEATURES
·
With TO-220 package
·
Sensitive Gate Triacs
·
Glass Passivated
·
Max IGT of 50 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
800
V
VRRM
Repetitive peak reverse voltage
800
V
IT(RMS)
RMS on-state current (full sine wave)TC=70℃
16
A
ITSM
Non-repetitive peak on-state current
125
A
Tj
Operating junction temperature
110
℃
Tstg
Storage temperature
-45~125
℃
Rth(j-c)
Thermal resistance, junction to case
1.9
℃
/W
Rth(j-a)
Thermal resistance, junction to ambient
62.5
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX
UNIT
IDRM
Repetitive peak off-state current
VD=VDRM, TC=110℃
2.0
mA
IGT
Gate trigger current
Ⅰ
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
12
50
mA
Ⅱ
19
50
Ⅲ
16
50
Ⅳ
34
IH
Holding current
Vsupply = 12 V†,IG= 0 initial ITM=100mA
40
mA
VGT
Gate trigger voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
2
V
VTM
On-state voltage
IT= 22.5A; IG= 50mA
1.7
V


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