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CPC3982T Datasheet(PDF) 2 Page - IXYS Corporation

Part # CPC3982T
Description  N-Channel Depletion-Mode
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC3982T Datasheet(HTML) 2 Page - IXYS Corporation

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PRELIMINARY
INTEGRATED CIRCUITS DIVISION
PRELIMINARY
2
R00D
CPC3982
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted)
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Ratings
Units
Drain-to-Source Voltage
800
V
Gate-to-Source Voltage
±15
V
Pulsed Drain Current
150
mA
Total Package Dissipation 1
0.4
W
Junction Temperature
125
ºC
Operational Temperature
-55 to +110
ºC
Storage Temperature
-55 to +125
ºC
1 Mounted on 1"x1" 2 oz. Copper FR4 board.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-to-Source Breakdown Voltage
BV
DSX
V
GS= -5.5V, ID=100µA
800
-
-
V
Gate-to-Source Off Voltage
V
GS(off)
V
DS= 15V, ID=1A
-1.4
-
-3.1
V
Change in V
GS(off) with Temperature
dV
GS(off) /dT
V
DS= 15V, ID=1A
-
-
4.5
mV/ºC
Gate Body Leakage Current
I
GSS
V
GS=±15V, VDS=0V
-
-
100
nA
Drain-to-Source Leakage Current
I
D(off)
V
GS= -5.5V, VDS=800V
-
-
1
µA
Saturated Drain-to-Source Current
I
DSS
V
GS= 0V, VDS=15V
20
-
-
mA
Static Drain-to-Source On-State Resistance
R
DS(on)
V
GS= 0V, ID=20mA, VDS=10V
-
-
380
Change in R
DS(on) with Temperature
dR
DS(on) /dT
-
-
2.5
%/ºC
Forward Transconductance
G
FS
I
D= 10mA, VDS = 10V
15
-
-
m
Input Capacitance
C
ISS
V
GS= -3.5V
V
DS= 25V
f= 1MHz
-
20
-pF
Common Source Output Capacitance
C
OSS
2.2
Reverse Transfer Capacitance
C
RSS
13
Source-Drain Diode Voltage Drop
V
SD
V
GS= -5V, ISD=5mA
-
0.6
1
V
Thermal Resistance, Junction to Ambient
JA
-
-
250
-
ºC/W


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