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CPC3982T Datasheet(PDF) 2 Page - IXYS Corporation |
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CPC3982T Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page PRELIMINARY INTEGRATED CIRCUITS DIVISION PRELIMINARY 2 R00D CPC3982 Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted) Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Parameter Ratings Units Drain-to-Source Voltage 800 V Gate-to-Source Voltage ±15 V Pulsed Drain Current 150 mA Total Package Dissipation 1 0.4 W Junction Temperature 125 ºC Operational Temperature -55 to +110 ºC Storage Temperature -55 to +125 ºC 1 Mounted on 1"x1" 2 oz. Copper FR4 board. Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV DSX V GS= -5.5V, ID=100µA 800 - - V Gate-to-Source Off Voltage V GS(off) V DS= 15V, ID=1A -1.4 - -3.1 V Change in V GS(off) with Temperature dV GS(off) /dT V DS= 15V, ID=1A - - 4.5 mV/ºC Gate Body Leakage Current I GSS V GS=±15V, VDS=0V - - 100 nA Drain-to-Source Leakage Current I D(off) V GS= -5.5V, VDS=800V - - 1 µA Saturated Drain-to-Source Current I DSS V GS= 0V, VDS=15V 20 - - mA Static Drain-to-Source On-State Resistance R DS(on) V GS= 0V, ID=20mA, VDS=10V - - 380 Change in R DS(on) with Temperature dR DS(on) /dT - - 2.5 %/ºC Forward Transconductance G FS I D= 10mA, VDS = 10V 15 - - m Input Capacitance C ISS V GS= -3.5V V DS= 25V f= 1MHz - 20 -pF Common Source Output Capacitance C OSS 2.2 Reverse Transfer Capacitance C RSS 13 Source-Drain Diode Voltage Drop V SD V GS= -5V, ISD=5mA - 0.6 1 V Thermal Resistance, Junction to Ambient JA - - 250 - ºC/W |
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