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IRF2805L Datasheet(PDF) 1 Page - International Rectifier |
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IRF2805L Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 135 V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 96 V A IDM Pulsed Drain Current Q 700 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy R 380 mJ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value X 1220 IAR Avalanche Current Q See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy W mJ dv/dt Peak Diode Recovery dv/dt S 2.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C HEXFET® Power MOSFET Absolute Maximum Ratings VDSS = 55V RDS(on) = 4.7mΩ ID = 135A V 06/10/02 www.irf.com 1 AUTOMOTIVE MOSFET PD - 94428 HEXFET(R) is a registered trademark of International Rectifier. Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax Typical Applications ● Climate Control ● ABS ● Electronic Braking ● Windshield Wipers IRF2805S IRF2805L D2Pak IRF2805S TO-262 IRF2805L Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθJA Junction-to-Ambient(PCB Mounted, steady state)** ––– 40 °C/W |
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